Transphorm’s latest GaN transistor passes automotive qualification

By Michael Alba Semiconductor provider Transphorm has announced that its third-generation high-voltage gallium nitride (GaN) field-effect transistor (FET) has passed AEC-Q101 stress tests for automotive-grade discrete semiconductors. The transistor targets EV applications including on-board chargers, DC-DC converters, and DC-AC inverter systems.
Transphorm’s new FET, the TP65H035WSQA, performed at 175° C during AEC-Q101 qualification testing, …read more

Source:: https://chargedevs.com/newswire/transphorms-latest-gan-transistor-passes-automotive-qualification/