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Charged Magazine

Transphorm’s latest GaN transistor passes automotive qualification

Semiconductor provider Transphorm has announced that its third-generation high-voltage gallium nitride (GaN) field-effect transistor (FET) has passed AEC-Q101 stress tests for automotive-grade discrete semiconductors. The transistor targets EV applications including on-board chargers, DC-DC converters, and DC-AC inverter systems.
Transphorm’s new FET, the TP65H035WSQA, performed at 175° C during AEC-Q101 qualification testing, …read more

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